IRF7476 PDF Datasheet
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Description
This is Power MOSFET(Vdss=12V/ Id=15A). PD - 94311
IRF7476
HEXFET® Power MOSFET
Applications l High Frequency 3.3V and 5V input Pointof-Load Synchronous Buck Converters for Netcom and Computing Applications. l Power Management for Netcom, Computing and Portable Applications. Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) l Fully Characterized Avalanche Voltage and Current
VDSS
12V
RDS(on) max 8.0mΩ@VGS = 4.5V
ID
15A
S S S G
1
8 7
A A D D D D
2
3
6
4
5
T o p V ie w
SO-8
Absolute Maximum Ratings
Symbol
VDS VGS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C TJ , TSTG
Parameter
Drain-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Junction and Storage Temperature Range
Max.
12 ±12 15 12 120 2.5 1.6 0.02 -55 to + 150
Units
V V A W W W, °C °C
Thermal Resistance
Symbol
RθJL RθJA
Parameter
Junction-to-Drain Lead Junction-to-Ambient.