IRF7413 PDF Datasheet


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Description

This is Power MOSFET(Vdss=30V/ Id=12A). PD- 91330F SMPS MOSFET Applications l High frequency DC-DC converters IRF7413 HEXFET® Power MOSFET RDS(on) max(mW) 11@VGS = 10V VDSS 30V ID 12A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current S S S G 1 8 A A D D D D 2 7 3 6 4 5 Top View SO-8 Absolute Maximum Ratings Parameter ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C VGS dv, dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv, dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Max. 12 9.6 96 2.5 0.02 ± 20 1.0 -55 to + 150 300 (1.6mm from case ) Units A W W, °C V V, ns °C Thermal Resistance Symbol RθJL RθJA Parameter Junction-to-Drain Lead Junction-to-Ambient T.