IRF630B PDF Datasheet
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Description
This is 200V N-Channel MOSFET. IRF630B, IRFS630B
IRF630B, IRFS630B
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC, DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features
9.0A, 200V, RDS(on) = 0.4Ω @VGS = 10 V Low gate charge ( typical 22 nC) Low Crss ( typical 22 pF) Fast switching 100% avalanche tested Improved dv, dt capability
D
G G DS
TO-220
IRF Series
GD S
TO-220F
IRFS Series
S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°.