IRF540A PDF Datasheet
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Description
This is Advanced Power MOSFET. Advanced Power MOSFET
FEATURES
Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 A (Max.) @ VDS = 100V Lower RDS(ON) : 0.041 Ω (Typ.)
Ο
IRF540A
BVDSS = 100 V RDS(on) = 0.052 Ω ID = 28 A
TO-220
1 2 3
1.Gate 2. Drain 3. Source
Absolute Maximum Ratings
Symbol VDSS ID IDM VGS EAS IAR EAR dv, dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C)
Ο
Value 100 28 19.8
1 O
Ο
Units V A A V mJ A mJ V, ns W W, C
Ο
Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv, dt Total Power Dissipation (TC=25 C )
Ο
110 + _ 20 523 28 10.7 6.5 107 0.71 - 55 to +175
O 1 O 1 O 3 O
2
Linear Derating Factor Operating Junction and Storage Temperature Range Maximum Lead Temp. for Soldering Purposes, 1, 8”.