IRF530N PDF Datasheet
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Description
This is N-channel TrenchMOS transistor. Philips Semiconductors
Product specification
N-channel TrenchMOS™ transistor
IRF530N
FEATURES
’Trench’ technology Low on-state resistance Fast switching Low thermal resistance
SYMBOL
d
QUICK REFERENCE DATA VDSS = 100 V ID = 17 A
g
RDS(ON) ≤ 110 mΩ
s
GENERAL DESCRIPTION
N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology. Applications: d.c. to d.c. converters switched mode power supplies The IRF530N is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING
PIN 1 2 3 tab gate drain source drain DESCRIPTION
SOT78 (TO220AB)
tab drain
1 2 3 gate source drain
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25.