IRF3707Z PDF Datasheet
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Description
This is Power MOSFET ( Transistor ). Applications l High Frequency Synchronous Buck Converters for Computer Processor Power
HEXFET® Power MOSFET
IRF3707Z IRF3707ZS IRF3707ZL
Qg
9.7nC
PD - 95812A
VDSS RDS(on) max
30V 9.5m:
Benefits l Low RDS(on) at 4.5V VGS l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current
TO-220AB IRF3707Z
D2Pak IRF3707ZS
TO-262 IRF3707ZL
Absolute Maximum Ratings
Parameter
VDS VGS ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C PD @TC = 100°C TJ TSTG Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current, VGS Pulsed Drain Current Continuous Drain Current, VGS @ 10V
Max.
30
Units
V A
g @ 10V g
i 42i
59 230 57 28
± 20
Maximum Power Dissipation Maximum Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds Mounting torque, 6-32 or M3 screw
W W, °C °C
0.38 -55 to + 175 300 (1.6mm from case) 10 lbf in (1.1 N m)
x
x
Thermal Resistance
Parameter
RθJC RθCS RθJA RθJA Juncti.