IPW90R1K2C3 PDF Datasheet
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Description
This is CoolMOS Power Transistor. IPW90R1K2C3
CoolMOS™ Power Transistor
Features Lowest figure-of-merit R ON x Qg Extreme dv, dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge
Product Summary V DS @ T J=25°C R DS(on),max @T J=25°C Q g,typ 900 1.2 28 V Ω nC
PG-TO247
CoolMOS™ 900V is designed for: Quasi Resonant Flyback , Forward topologies PC Silverbox and consumer applications Industrial SMPS
Type IPW90R1K2C3
Package PG-TO247
Marking 9R1K2C
Maximum ratings, at T J=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current 2) Avalanche energy, single pulse Avalanche energy, repetitive t AR 2),3) Avalanche current, repetitive t AR 2),3) MOSFET dv , dt ruggedness
Gate source voltage
Value 5.1 3.2 10 68 0.31 0.92
Unit A
I D,pulse E AS E AR I AR dv , dt V GS
T C=25 °C I D=0.92 A, V DD=50 V I D=0.92 A, V DD.