IPP60R299CP PDF Datasheet


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Description

This is Power Transistor. IPP60R299CP CoolMOS® Power Transistor Features Lowest figure-of-merit R ONxQg Ultra low gate charge Extreme dv, dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Product Summary V DS @ Tj,max R DS(on),max Q g,typ 650 V 0.299 Ω 22 nC PG-TO220 CoolMOS CP is specially designed for: Hard switching SMPS topologies Type IPP60R299CP Package PG-TO220 Ordering Code SP000084280 Marking 6R299P Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Avalanche energy, repetitive t AR2),3) Avalanche current, repetitive t AR2),3) MOSFET dv , dt ruggedness Gate source voltage I D,pulse E AS E AR I AR dv , dt V GS V DS=0...480 V static AC (f >1 Hz) Power dissipation Operating and storage temperature Mounting torque Value 11 7 34 290 0.44 Unit A T C=25 .