IPFH6N03LAG PDF Datasheet
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Description
This is Power-Transistor.
IPDH6N03LA G IPSH6N03LA G
IPFH6N03LA G IPUH6N03LA G
OptiMOS®2 Power-Transistor
Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant
Product Summary V DS R DS(on),max (SMD version) ID 25 6 50 V mΩ A
Type
IPDH6N03LA G
IPFH6N03LA G
IPSH6N03LA G
IPUH6N03LA G
Package Marking
PG-TO252-3-11 H6N03LA
PG-TO252-3-23 H6N03LA
PG-TO251-3-11 H6N03LA
PG-TO251-3-1 H6N03LA
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v , dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv , dt V GS P tot T j, T stg T C=25 °C T .