IDW10G65C5 PDF Datasheet
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Description
This is SiC Schottky Barrier diodes. SiC
Silicon Carbide Diode
5 t h Generation thinQ! T M
650V SiC Schottky Diode
IDW10G65C5
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Final Datasheet
Rev. 2.2, 2013-01-15
Power Management & Multimarket
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5th Generation thinQ!™ SiC Schottky Diode 1 Description
IDW10G65C5
ThinQ!™ Generation 5 represents Infineon leading edge technology for the SiC Schottky Barrier diodes. Thanks to the more compact design and thinwafer technology, the new family of products shows improved efficiency over all load conditions, resulting from both the improved thermal characteristics and a lower figure of merit (Qc x Vf). The new thinQ!™ Generation 5 has been designed to complement our 650V CoolMOS™ families: this ensures meeting the most stringent application requirements in this voltage range.
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Features
Revolutionary semiconductor material - Silicon Carbide Benchmark switching behavior No reverse recovery, No forward recovery Te.