IDC08S60CE PDF Datasheet


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Description

This is Schottky Diode. IDC08S60CE 2nd generation thinQ!TM SiC Schottky Diode Features: Revolutionary semiconductor material Silicon Carbide Switching behavior benchmark No reverse recovery No temperature influence on the switching behavior No forward recovery High surge current capability Applications: SMPS, PFC, snubber C A Chip Type IDC08S60CE VBR 600V IF 8A Die Size 1.658 x 1.52 mm2 Package sawn on foil Mechanical Parameter Raster size Anode pad size Area total Thickness Wafer size Max. possible chips per wafer Passivation frontside Anode metal Cathode metal Die bond Wire bond Reject ink dot size Recommended storage environment 1.658x 1.52 1.421 x 1.283 2.52 355 100 2682 Photoimide 3200 nm Al Ni Ag system suitable for epoxy and soft solder die bonding Electrically conductive glue or solder Al, ≤ 350 m ≥ 0.3 mm Store in original container, in dry nitrogen, in dark environment, < 6 month at an ambient temperature of 23°C m mm mm2 Edited by INFINEON Technologies, .