H9N03LA PDF Datasheet

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Description

This is IPDH9N03LA. IPDH9N03LA G IPSH9N03LA G OptiMOS®2 Power-Transistor Features Ideal for high-frequency dc, dc converters Qualified according to JEDEC1) for target application N-channel, logic level Excellent gate charge x R DS(on) product (FOM) Superior thermal resistance 175 °C operating temperature Pb-free lead plating; RoHS compliant Product Summary V DS R DS(on),max (SMD version) ID 25 9.2 30 V mΩ A Type IPDH9N03LA G IPSH9N03LA G Package Marking PG-TO252-3-11 H9N03LA PG-TO251-3-11 H9N03LA Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C2) T C=100 °C Pulsed drain current Avalanche energy, single pulse Reverse diode d v , dt Gate source voltage4) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS dv , dt V GS P tot T j, T stg T C=25 °C T C=25 °C3) I D=30 A, R GS=25 Ω I D=30 A, V DS=20 V, di , dt =200 A, s, T j,max=175 °C Value 30 30 210 80 6 ±20 52 -.