H5N1503P PDF Datasheet


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Description

This is Silicon N Channel MOS FET High Speed Power Switching. H5N1503P Silicon N Channel MOS FET High Speed Power Switching REJ03G0186-0100Z Rev.1.00 Mar.10.2004 Features Low on-resistance Low leakage current High speed switching Outline TO-3P D G 1. Gate 2. Drain (Flange) 3. Source S 1 2 3 Absolute Maximum Ratings (Ta = 25°C) Item Drain to Source voltage Gate to Source voltage Drain current Drain peak current Body-Drain diode reverse Drain current Avalanche current Avalanche energy Channel dissipation Channel to case thermal impedance Channel temperature Storage temperature Notes: 1. PW ≤ 10 s, duty cycle ≤ 1% 2. Value at Tc = 25°C 3. STch = 25°C, Tch ≤ 150°C Symbol VDSS VGSS ID ID (pulse)Note1 IDR IAPNote3 EARNote3 Pch Note2 θch-c Tch Tstg Ratings 150 ±30 70 210 70 35 91.8 150 0.833 150 55 to +150 Unit V V A A A A mJ W °C, W °C °C Rev.1.00, Mar.10.2004, page 1 of 6 H5N1503P Electrical Characteristics (Ta = 25°C) Item Drain to Source breakdown voltage Zero Gate voltage drain current Gate to Source leak cur.