GTS9922E PDF Datasheet
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Description
This is N-CHANNEL ENHANCEMENT MODE POWER MOSFET.
Pb Free Plating Product
ISSUED DATE :2005, 10, 26 REVISED DATE :2007, 01, 25B
GTS9922E
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
BVDSS RDS(ON) ID
20V 15m 6.8A
The GTS9922E provides the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. *Low on-resistance *Capable of 2.5V gate drive *Optimal DC, DC battery application *Surface mount package
Description
Features
Package Dimensions
REF. A A1 b c D
Millimeter Min.
0.05 0.19 0.09 2.90
Max.
1.20 0.15 0.30 0.20 3.10
REF. E E1 e L S
Millimeter Min.
6.20 4.30 0.45 0°
Max.
6.60 4.50 0.75 8°
0.65 BSC
Absolute Maximum Ratings
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current ,
[email protected] Continuous Drain Current ,
[email protected] Pulsed Drain Current
1 3 3
Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg
Ratings 20 ±12 6.8 5.4 25 1 0.008 -55 ~ +150
Unit V V A A A W W,
Total Power Dissipation Linear Derating Factor.