G7S313UPBF PDF Datasheet
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Description
This is IRG7S313UPBF. PD - 97402A
PDP TRENCH IGBT
Features l Advanced Trench IGBT Technology l Optimized for Sustain and Energy Recovery circuits in PDP applications TM) l Low VCE(on) and Energy per Pulse (EPULSE for improved panel efficiency l High repetitive peak current capability l Lead Free package
IRG7S313UPbF
Key Parameters
330 1.35 160 150 V V A °C
VCE min VCE(ON) typ. @ IC = 20A IRP max @ TC= 25°C TJ max
C
G E
G
C
E
n-channel
G Gate C Collector
D2Pak IRG7S313UPbF
E Emitter
Description This IGBT is specifically designed for applications in Plasma Display Panels. This device utilizes advanced trench IGBT technology to achieve low VCE(on) and low EPULSETM rating per silicon area which improve panel efficiency. Additional features are 150°C operating junction temperature and high repetitive peak current capability. These features combine to make this IGBT a highly efficient, robust and reliable device for PDP applications.
Absolute Maximum Ratings
Parameter
VGE IC @ TC = 25°C IC @ TC = 100°.