G4PH40UD2-E PDF Datasheet
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Description
This is IRG4PH40UD2-E. PD - 96781
IRG4PH40UD2-E
Features
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
C
UltraFast CoPack IGBT
VCES = 1200V
UltraFast IGBT optimized for high operating frequencies up to 200kH- in resonant mode IGBT co-packaged with HEXFREDTM ultrafast ultra-soft-recovery anti-parallel diode for use in resonant circuits Industry standard TO-247AD package with extended leads
G E
VCE(on) typ. = 2.43V
@VGE = 15V, IC = 21A
Benefits
n-channel
Applications
Higher switching frequency capability than competitive IGBTs Highest efficiency available HEXFRED diodes optimized for performance with IGBTs. Minimized recovery characteristics require less , no snubbing Induction cooking systems Microwave Ovens Resonant Circuits
TO-247AD
Parameter Max.
1200 41 21 82 82 10 40 ±20 160 65 -55 to +150 300 (0.063 in. (1.6mm) from case) 10 lbf in (1.1N m)
Absolute Maximum Ratings
Units
V A VCES IC @ TC = 25°C IC @ TC = 100°C ICM ILM IF @ Tc = 100.