FQPF5N50CF PDF Datasheet
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Description
This is Low gate charge. FQPF5N50CF 500V N-Channel MOSFET
FRFET
FQPF5N50CF
500V N-Channel MOSFET
Features
5A, 500V, RDS(on) = 1.55 Ω @VGS = 10 V Low gate charge ( typical 18nC) Low Crss ( typical 15pF) Fast switching 100% avalanche tested Improved dv, dt capability
TM
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL Drain-Source Voltage Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) D.