FQPF20N06 PDF Datasheet
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Description
This is 60V N-Channel MOSFET. FQPF20N06 N-Channel QFET® MOSFET
FQPF20N06
N-Channel QFET® MOSFET
60 V, 15 A, 60 mΩ
Description
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
November 2013
Features
15 A, 60 V, RDS(on) = 60 mΩ (Max.) @ VGS = 10 V, ID = 7.5 A
Low Gate Charge (Typ. 11.5 nC) Low Crss (Typ. 25 pF) 100% Avalanche Tested 175°C Maximum Junction Temperature Rating
D
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv, dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
D.