FQP6N60C PDF Datasheet
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Description
This is 600V N-Channel MOSFET. FQP6N60C, FQPF6N60C
QFET
FQP6N60C, FQPF6N60C
600V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction, electronic lamp ballasts based on half bridge topology.
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Features
5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv, dt capability
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G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Paramete.