FQP50N06L PDF Datasheet
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Description
This is 60V LOGIC N-Channel MOSFET. FQP50N06L
May 2001
QFET
FQP50N06L
60V LOGIC N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC, DC converters, and high efficiency switching for power management in portable and battery operated products.
TM
Features
52.4A, 60V, RDS(on) = 0.021Ω @VGS = 10 V Low gate charge ( typical 24.5 nC) Low Crss ( typical 90 pF) Fast switching 100% avalanche tested Improved dv, dt capability 175°C maximum junction temperature rating
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL
TC = 25°C unles.