FQP13N10 PDF Datasheet
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Description
This is 100V N-Channel MOSFET. FQP13N10
January 2001
QFET
FQP13N10
100V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand a high energy pulse in the avalanche and commutation modes. These devices are well suited for low voltage applications such as audio amplifier, high efficiency switching DC, DC converters, and DC motor control.
TM
Features
12.8A, 100V, RDS(on) = 0.18Ω @VGS = 10 V Low gate charge ( typical 12 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv, dt capability 175°C maximum junction temperature rating
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source V.