FQP10N20C PDF Datasheet
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Description
This is 200V N-Channel MOSFET. FQP10N20C, FQPF10N20C
QFET
FQP10N20C, FQPF10N20C
200V N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switching DC, DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supplies and motor controls.
TM
Features
9.5A, 200V, RDS(on) = 0.36Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 40.5 pF) Fast switching 100% avalanche tested Improved dv, dt capability
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G! G DS
TO-220
FQP Series
GD S
TO-220F
FQPF Series
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S
Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parame.