FQD2N60C PDF Datasheet

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Description

This is 600V N-Channel MOSFET. FQD2N60C , FQU2N60C N-Channel QFET® MOSFET April 2013 FQD2N60C , FQU2N60C 600 V, 1.9 A, 4.7 Ω Features 1.9 A, 600 V, RDS(on) = 4.7 Ω (Max.) @ VGS = 10 V, ID = 0.95 A Low Gate Charge (Typ. 8.5 nC) Low Crss (Typ. 4.3 pF) 100% Avalanche Tested RoHS Compliant N-Channel QFET® MOSFET Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts. D G S G D D ! ● S ◀ G! ▲ ● ● D-PAK I-PAK ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv, dt PD Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Paramete.