FJV4101R PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is PNP Epitaxial Silicon Transistor. FJV4101R
FJV4101R
Switching Application (Bias Resistor Built In)
Switching circuit, Inverter, Interface circuit, Driver Circuit Built in bias Resistor (R1=4.7KΩ, R2=4.7KΩ) Complement to FJV3101R
3
2 1
SOT-23
1. Base 2. Emitter 3. Collector
Equivalent Circuit
Marking
R1 B R2
C
R 71
PNP Epitaxial Silicon Transistor
E
Absolute Maximum Ratings Ta=25°C unless otherwise noted
Symbol VCBO VCEO VEBO IC PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -10 -100 200 150 -55 ~ 150 Units V V V mA mW °C °C
Electrical Characteristics Ta=25°C unless otherwise noted
Symbol BVCBO BVCEO ICBO hFE VCE(sat) fT Cob VI(off) VI(on) R1 R1, R2 Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Collector Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance Input O.