FI4019HG PDF Datasheet
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Description
This is Digital Audio MOSFET. PD - 96274
IRFI4019HG-117P
DIGITAL AUDIO MOSFET
Features
Integrated Half-Bridge Package
Reduces the Part Count by Half
Facilitates Better PCB Layout
Key Parameters Optimized for Class-D Audio Amplifier Applications
Low RDS(ON) for Improved Efficiency Low Qg and Qsw for Better THD and
Improved Efficiency
Low Qrr for Better THD and Lower EMI
Can Delivery up to 200W per Channel into 8Ω Load in Half-Bridge Configuration Amplifier
Lead-Free Package
Halogen-Free
hKey Parameters
VDS RDS(ON) typ. @ 10V Qg typ. Qsw typ. RG(int) typ. TJ max
150 80 13 4.1 2.5 150
V
m:
nC nC
Ω °C
D1 G1
S1, D2 G2 S2
TO-220 Full-Pak 5 PIN
G1, G2
D1, D2
S1, S2
Description
Gate
Drain
Source
This Digital Audio MosFET Half-Bridge is specifically designed for Class D audio amplifier applications. It
consists of two power MosFET switches connected in half-bridge configuration. The latest process is used
to achieve low on-resistance per silicon area. Furthermore, Gate charge, body-diode.