FGPF4633 PDF Datasheet
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Description
This is PDP IGBT. FGPF4633 330V PDP Trench IGBT
February 2010
FGPF4633 330V PDP IGBT
Features
High current capability Low saturation voltage: VCE(sat) = 1.55 V @ IC = 70A High input impedance Fast switching RoHS compliant
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General Description
Using Novel Trench IGBT Technology, Fairchild’s new series of trench IGBTs offer the optimum performance for PDP applications where low conduction and switching losses are essential.
Applications
PDP System
GC E
TO-220F (Potted)
Absolute Maximum Ratings
Symbol
VCES VGES IC pulse(1)* PD TJ Tstg TL
Description
Collector to Emitter Voltage Gate to Emitter Voltage Collector Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1, 8” from case for 5 seconds @ TC = 25oC @ TC = 25oC @ TC = 100oC
Ratings
330 ± 30 300 30.5 12.2 -55 to +150 -55 to +150 300
Units
V V A W W
o o o
C C C
Thermal Characteristics
Symbol
RθJC(IGBT) RθJA
Notes: (1) Hal.