FDP2570 PDF Datasheet
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Description
This is 150V N-Channel PowerTrench MOSFET. FDP2570, FDB2570
August 2001
FDP2570, FDB2570
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically for switching on the primary side in the isolated DC, DC converter application. Any application requiring a 150V MOSFETs with low on-resistance and fast switching will benefit. These MOSFETs feature faster switching and lower gate charge than other MOSFETs with comparable RDS(ON) specifications. The result is a MOSFET that is easy and safer to drive (even at very high frequencies), and DC, DC power supply designs with higher overall efficiency.
Features
22 A, 150 V. RDS(ON) = 80 mΩ @ VGS = 10 V RDS(ON) = 90 mΩ @ VGS = 6 V
Low gate charge (40nC typical) Fast switching speed High performance trench technology for extremely low RDS(ON) 175°C maximum junction temperature rating
D
D
G
G D S TO-220
FDP Series
G
S
TO-263AB
FDB Series
S
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-So.