FDN308P PDF Datasheet
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Description
This is P-Channel 2.5V Specified PowerTrench MOSFET. FDN308P
February 2001
FDN308P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Features
20 V, 1.5 A. RDS(ON) = 125 mΩ @ VGS = 4.5 V RDS(ON) = 190 mΩ @ VGS = 2.5 V
Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Applications
Power management Load switch Battery protection
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
Parameter
Ratings
20 ±12
(Note 1a)
Units
V V A W °C
1.5 10 0.5 0.46 55 to +150
Maximum Power Dissipation PD TJ, TSTG
(Note 1a) (No.