FDN302P PDF Datasheet
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Description
This is P-Channel 2.5V Specified PowerTrench MOSFET. FDN302P
October 2000
FDN302P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET uses a rugged gate version of Fairchild’s advanced PowerTrench process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5V 12V).
Features
20 V, 2.4 A. RDS(ON) = 0.055 Ω @ VGS = 4.5 V RDS(ON) = 0.080 Ω @ VGS = 2.5 V
Fast switching speed High performance trench technology for extremely low RDS(ON) SuperSOTTM -3 provides low RDS(ON) and 30% higher power handling capability than SOT23 in the same footprint
Applications
Power management Load switch Battery protection
D
D
S
G S
SuperSOT -3
TM
G
TA=25oC unless otherwise noted
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
Parameter
Ratings 20
±12
(Note 1a)
Units
V V A W °C
2.4 10
0.5 0.46
(Note 1a) (Note 1b)
Oper.