FDMA6023PZT PDF Datasheet

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Description

This is Dual P-Channel PowerTrench MOSFET. FDMA6023PZT Dual P-Channel PowerTrench® MOSFET February 2009 FDMA6023PZT Dual P-Channel PowerTrench® MOSFET -20 V, -3.6 A, 60 mΩ Features Max rDS(on) = 60 mΩ at VGS = -4.5 V, ID = -3.6 A Max rDS(on) = 80 mΩ at VGS = -2.5 V, ID = -3.0 A Max rDS(on) = 110 mΩ at VGS = -1.8 V, ID = -2.0 A Max rDS(on) = 170 mΩ at VGS = -1.5 V, ID = -1.0 A Low Profile-0.55 mm maximum - in the new package MicroFET 2x2 mm Thin HBM ESD protection level > 2.4 kV typical (Note 3) RoHS Compliant Free from halogenated compounds and antimony oxides General Description This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultraportable applications. It features two independent P-Channel MOSFETs with low on-state resistance for minimum conduction losses. When connected in the typical common source configuration, bi-directional current flow is possible. The MicroFET 2X2 Thin package offers exceptional thermal.