FDG6335N PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is 20V N & P-Channel PowerTrench MOSFETs. FDG6335N
October 2001
FDG6335N
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. It has been optimized use in small switching regulators, providing an extremely low RDS(ON) and gate charge (QG) in a small package.
Features
0.7 A, 20 V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V Low gate charge (1.1 nC typical) High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package
Applications
DC, DC converter Power management Loadswitch
S G D D G
Pin 1
S 1 or 4 G 2 or 5
6 or 3 D 5 or 2 G 4 or 1 S
Dual N-Channel
S
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pul.