FDG6332C PDF Datasheet
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Description
This is 20V N & P-Channel PowerTrench MOSFETs. FDG6332C
September 2003
FDG6332C
20V N & P-Channel PowerTrench® MOSFETs
General Description
The N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices have been designed to offer exceptional power dissipation in a very small footprint for applications where the bigger more expensive TSSOP-8 and SSOP-6 packages are impractical.
Features
Q1 0.7 A, 20V. RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 400 mΩ @ VGS = 2.5 V Q2 0.6 A, 20V. RDS(ON) = 420 mΩ @ VGS = 4.5 V RDS(ON) = 630 mΩ @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) SC70-6 package: small footprint (51% smaller than SSOT-6); low profile (1mm thick)
Applications
DC, DC converter Load switch LCD display inverter
S G D D
Pin 1
1 2 3
Complementary
6 5 4
G S
SC70-6
Absolute Maximum Ratings
Symbol
VD.