FDG6306P PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is P-Channel 2.5V Specified PowerTrench MOSFET. FDG6306P
February 2001
FDG6306P
P-Channel 2.5V Specified PowerTrench® MOSFET
General Description
This P -Channel 2.5V specified MOSFET is a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications wi th a wide range of gate drive voltage (2.5V 12V).
Features
0.6 A, 20 V. Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package RDS(ON) = 420 mΩ @ V GS = 4.5 V RDS(ON) = 630 mΩ @ V GS = 2.5 V
Applications
Battery management Load switch
S G D
G 2 or 5 S 1 or 4
6 or 3 D 5 or 2 G 4 or 1 S
D G
Pin 1
S
D 3 or 6
SC70-6
The pinouts are symmetrical; pin 1 and pin 4 are interchangeable.
Absolute Maximum Ratings
Symbol
V DSS V GSS ID PD TJ , TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ± 12
(Note 1)
Units
V V A W °C
0.6 2.0.