FDG328P PDF Datasheet
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Description
This is P-Channel 2.5V Specified PowerTrench MOSFET. FDG328P
October 2000
FDG328P
P-Channel 2.5V Specified PowerTrench MOSFET
General Description
This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor’s advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V 12V).
Features
1.5 A, 20 V. RDS(ON) = 0.145 Ω @ VGS = 4.5 V RDS(ON) = 0.210 Ω @ VGS = 2.5 V Low gate charge High performance trench technology for extremely low RDS(ON) Compact industry standard SC70-6 surface mount package
Applications
Load switch Power management DC, DC converter
S D D
1 2
G
6 5 4
Pin 1
D D
3
SC70-6
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed
TA=25oC unless otherwise noted
Parameter
Ratings
20 ± 12
(Note 1a)
Units
V V A W °C
1.5 6 0.75 0.48 -55 to +150
Power Dissipation for Single Operation
(Note 1a) (Note 1b)
Ope.