FDD6530A PDF Datasheet
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Description
This is 20V N-Channel PowerTrench MOSFET. FDD6530A
July 2001
FDD6530A
20V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS( ON) and fast switching speed.
Features
21 A, 20 V RDS(ON) = 32 mΩ @ VGS = 4.5 V RDS(ON) = 47 mΩ @ VGS = 2.5 V Low gate charge (6.5 nC typical) Fast switching
Applications
DC, DC converter Motor drives
High performance trench technology for extremely low RDS(ON) .
D
D G S
TO-252
S G
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Power Dissipation
TA=25 C unless otherwise noted
o
Parameter
Ratings
20 ±8
(Note 3) (Note 1a) (Note 1) (Note 1a) (Note 1b)
Units
V V A W
21 100 33 3.3 1.6 55 to +175
TJ, TSTG
Operating and Storage Junction Temperature Range
°C
Thermal Characteristics
.