FDC6561AN PDF Datasheet
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Description
This is Dual N-Channel Logic Level PowerTrenchTM MOSFET. April 1999
FDC6561AN Dual N-Channel Logic Level PowerTrenchTM MOSFET
General Description Features
2.5 A, 30 V. RDS(ON) = 0.095 Ω @ VGS = 10 V RDS(ON) = 0.145 Ω @ VGS = 4.5 V Very fast switching. Low gate charge (2.1nC typical). SuperSOTTM-6 package: small footprint (72% smaller than standard SO-8); low profile (1mm thick).
These N-Channel Logic Level MOSFETs are produced using Fairchild Semiconductor's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. These devices are well suited for all applications where small size is desireable but especially low cost DC, DC conversion in battery powered systems.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
SOIC-16
D2 S1 D1
1 .56
G2 S2
4
3
5
2
SuperSOT TM-6
pin 1
G1
6
1
Absolute Maximum Ratings
Symbol Parameter
TA = 25°C unless otherwise note
Ratings
Units
VDSS VGSS ID PD
Drain-Source Voltage Gate-Source Vo.