FDC6303N PDF Datasheet
Please enter the part number you wish to PDF download in the search bar.
Description
This is Digital FET/ Dual N-Channel. August 1997
FDC6303N Digital FET, Dual N-Channel
General Description
These dual N-Channel logic level enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. This device has been designed especially for low voltage applications as a replacement for digital transistors in load switching applications. Since bias resistors are not required this one N-Channel FET can replace several digital transistors with different bias resistors like the IMHxA series.
Features
25 V, 0.68 A continuous, 2 A Peak. RDS(ON) = 0.6 Ω @ VGS = 2.7 V RDS(ON) = 0.45 Ω @ VGS= 4.5 V. Very low level gate drive requirements allowing direct operation in 3V circuits. VGS(th) < 1.5 V. Gate-Source Zener for ESD ruggedness. >6kV Human Body Model Replace multiple NPN digital transistors (IMHxA series) with one DMOS FET.
SOT-23
SuperSOTTM-6
SuperSOTTM-8
SO-8
SOT-223
.