FDC2512 PDF Datasheet
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Description
This is 150V N-Channel PowerTrench MOSFET. FDC2512
February 2002
FDC2512
150V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC, DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
1.4 A, 150 V. RDS(ON) = 425 mΩ @ VGS = 10 V RDS(ON) = 475 mΩ @ VGS = 6 V
Applications
DC, DC converter
High performance trench technology for extremely low RDS(ON) Low gate charge (8nC typ) High power and current handling capability Fast switching speed
D
D
S
1 2
G
6 5 4
SuperSOT TM -6
D
D
3
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, Tstg Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed Maximum Power Dissipation
TA=25oC unless otherwise noted
Parameter
Ratings
150 ± 20
(Note 1a)
Units
V V A W °C
1.4 8 1.6 0.8 55 to +150
(Note 1a) (Note 1b)
Operating and Storage Junction .