FCPF11N60F PDF Datasheet

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Description

This is 600V N-Channel MOSFET. FCP11N60F, FCPF11N60F 600V N-Channel MOSFET SuperFET FCP11N60F, FCPF11N60F 600V N-Channel MOSFET Features 650V @TJ = 150°C Typ. RDS(on) = 0.32Ω Fast Recovery Type ( trr = 120ns) Ultra Low Gate Charge (typ. Qg = 40nC) Low Effective Output Capacitance (typ. Cosseff.=95pF) 100% avalanche tested TM Description SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv, dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC, DC power conversion in switching mode operation for system miniaturization and higher efficiency. D ! " G! G DS ! " " " TO-220 GD S TO-220F ! S Absolute Maximum Ratings Symbol ID IDM VGSS EAS IAR EAR dv, dt PD TJ,.