FCB11N60 PDF Datasheet
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Description
This is N-Channel MOSFET. FCB11N60 600V N-Channel MOSFET
SuperFET
FCB11N60
600V N-Channel MOSFET Features
650V @TJ = 150°C Typ. RDS(on) = 0.32Ω Ultra low gate charge (typ. Qg = 40nC) Low effective output capacitance (typ. Coss.eff = 95pF) 100% avalanche tested
TM
Description
SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv, dt rate and higher avalanche energy. Consequently, SuperFET is very suitable for various AC, DC power conversion in switching mode operation for system miniaturization and higher efficiency.
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Absolute Maximum Ratings
Symbol
VDSS ID IDM VGSS EAS IAR EAR dv, dt PD TJ, TSTG TL Drain-Source Voltage Drain Current Drain Current Gate-Source volt.