EN29F040-90PI PDF Datasheet

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Description

This is 4 Megabit (512K x 8-bit) Flash Memory. EN29F040 EN29F040 4 Megabit (512K x 8-bit) Flash Memory FEATURES 5.0V operation for read, write, erase operations Fast Read Access Time - 45ns, 55ns, 70ns, and 90ns Sector Architecture: 8 uniform sectors of 64Kbytes each Supports full chip erase Individual sector erase supported Sector protection: Hardware locking of sectors to prevent program or erase operations within individual sectors High performance program, erase speed Byte program time: 10 s typical Sector erase time: 500ms typical Chip erase time: 3.5s typical JEDEC Standard program and erase commands JEDEC standard DATA polling and toggle bits feature Single Sector and Chip Erase Sector Unprotect Mode Embedded Erase and Program Algorithms Erase Suspend , Resume modes: Read and program another Sector during Erase Suspend Mode 0.35 m double-metal double-poly triple-well CMOS Flash Technology Low Vcc write inhibit < 3.2V 100K endurance cycle Package Options - 32-pin PDIP - 32-pin PLCC - 32-pin TSOP (.