DFF2N60 PDF Datasheet
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Description
This is 2.4A, 600V, N-Channel MOSFET.
DFF2N60
N-Channel MOSFET
Features
High ruggedness RDS(on) (Max 5.5 )@VGS=10V Gate Charge (Typical 15nC) Improved dv, dt Capability 100% Avalanche Tested 1. Gate {
{ {
2. Drain
BVDSS = 600V RDS(ON) = 5.5 ohm ID = 2.4A
3. Source
General Description
This N-channel enhancement mode field-effect power transistor using DI semiconductor’s advanced planar stripe, DMOS technology intended for off-line switch mode power supply. Also, especially designed to minimize rds(on) and high rugged avalanche characteristics. The TO-220F PAK pkg is well suited for charger SMPS and small power inverter application.
TO-220F
1 2
3
Absolute Maximum Ratings
Symbol
VDSS ID IDM VGS EAS EAR dv, dt PD TSTG, TJ TL Drain to Source Voltage Continuous Drain Current(@TC = 25°C)* Continuous Drain Current(@TC = 100°C)* Drain Current Pulsed Gate to Source Voltage Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv, dt Total Power Dissipation(@TC = 25 °C) Derating Facto.