D5702 PDF Datasheet


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Description

This is UPD5702. NEC's 2.4 GH- Si LD MOS POWER AMPLIFIER UPD5702TU FEATURES MEDIUM OUTPUT POWER: POUT = +21 dBm TYP @PIN = -2 dBm, f = 2.45 GH- ON CHIP OUTPUT POWER CONTROL FUNCTION SINGLE SUPPLY VOLTAGE: VDS = 3.0 V TYP PACKAGED IN 8 PIN L2MM (2.0 X 2.2 X 0.5mm) SUITABLE FOR HIGH- DENSITY SURFACE MOUNT INTERNAL BLOCK DIAGRAM Pout2 1 8 Pin2 Pout2 2 7 Pin2 GND 3 6 GND DESCRIPTION NEC's UPD5702TU is a silicon LD MOS IC designed for use as a power amplifier up to 2.4 GH- application. This IC consists of two stage amplifiers. The device is packaged in a low cost, surface mount 8 pin L2MM (Leadless Mini Mold) plastic package. Ideally suited for high density surface mount designs. NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. Pin1 4 5 Pout1 APPLICATIONS 1.9 GHZ Application Ex. PHS etc. 2.4 GH- application Ex. Bluetooth, Wireless LAN, etc. General purpose medium power AGC amplifier ELECTRICAL CHARACTERISTI.