D3N50 PDF Datasheet
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Description
This is AOD3N50. AOD3N50 3A, 500V N-Channel MOSFET
General Description
The AOD3N50 has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline power supply designs.
Features
VDS (V) = 600V @ 150°C ID = 2.8A RDS(ON) < 3Ω (VGS = 10V) 100% UIS Tested! 100% R g Tested!
TO-252 D-PAK Top View Bottom View D
D
G
S
S
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G S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current B Pulsed Drain Current Avalanche Current
C C
Maximium 500 ±30 2.8 1.8 9.0 2.0 60 120 5 57 0.45 -50 to 150 300
Units V V A A mJ mJ V, ns W W, C °C °C
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TC=25°C TC=100°C ID IDM IAR EAR
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Repetitive avalanche energy C Single pulsed avalanche energy Peak diode recovery dv, dt TC=25°C B Po.