D17P137ACT PDF Datasheet


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Description

This is UPD17P137ACT. PD17134A SUBSERIES 4-BIT SINGLE-CHIP MICROCONTROLLER PD17134A PD17135A PD17136A PD17137A PD17P136A PD17P137A 1993 Document No. U11607EJ3V0UM00 (3rd edition) Date Published December 1996 N Printed in Japan NOTES FOR CMOS DEVICES 1 PRECAUTION AGAINST ESD FOR SEMICONDUCTORS Note: Strong electric field, when exposed to a MOS device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. Environmental control must be adequate. When it is dry, humidifier should be used. It is recommended to avoid using insulators that easily build static electricity. Semiconductor devices must be stored and transported in an anti-static container, static shielding bag or conductive material. All test and measurement tools including work bench and floor should be grounded. The operator should be grounded using wr.