CPS057 PDF Datasheet
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Description
This is Silicon Controlled Rectifier Sensitive Gate SCR Chip. PROCESS
CPS057
Silicon Controlled Rectifier
Sensitive Gate SCR Chip
PROCESS DETAILS Process Die Size Die Thickness Cathode Bonding Pad Area Gate Bonding Pad Area Top Side Metalization Back Side Metalization
GLASS PASSIVATED MESA 57 x 57 MILS 8.7 MILS ± 0.6 MILS 24 x 14 MILS 7.9 x 7.9 MILS Al - 45,000 Al, Mo, Ni, Ag - 32,000
GEOMETRY GROSS DIE PER 4 INCH WAFER 3,374 PRINCIPAL DEVICE TYPES CS39-4D 2N2323 thru 2N2329 CS223-4M
BACKSIDE ANODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19 -May 2005)
PROCESS
CPS057
Typical Electrical Characteristics
145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com
R1 (19 -May 2005)
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