C640 PDF Datasheet
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Description
This is NPN Silicon Epitaxial Planar Transistor. 2SC640
NPN Silicon Epitaxial Planar Transistor
for switching and AF amplifier applications. The transistor is subdivided into five groups R, O, Y, P and L, according to its DC current gain. As complementary type the PNP transistor 2SA733 is recommended. On special request, these transistors can be manufactured in different pin configurations.
1. Emitter 2. Collector 3. Base TO-92 Plastic Package Weight approx. 0.19g
Absolute Maximum Ratings (Ta = 25℃)
Parameter Collector Base Voltage Collector Emitter Voltage Emitter Base Voltage Collector Current Power Dissipation Junction Temperature Storage Temperature Range Symbol VCBO VCEO VEBO IC Ptot Tj TS Value 40 30 5 100 150 150 -55 to +150 Unit V V V mA mW
O O
C C
Page 1 of 2
7, 15, 2011
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Characteristics at Tamb=25 OC
Parameter DC Current Gain at VCE=6V, IC =1mA 1) Current Gain Group R O Y P L Collector Base Breakdown Voltage at IC=100μA Collector Emitter Breakdown Voltage at IC=10mA Emitter Base .