C5902 PDF Datenblatt


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Beschreibung

This is NPN Transistor - 2SC5902. Power Transistors 2SC5902 Silicon NPN triple diffusion mesa type Horizontal deflection output for TV 15.5±0.5 (10.0) Unit: mm φ 3.2±0.1 5˚ (4.5) 3.0±0.3 5˚ - Features High breakdown voltage: VCBO ≥ 1 700 V Wide safe operation area Built-in dumper diode 26.5±0.5 (23.4) (2.0) 5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5 5.5±0.3 5˚ 5˚ - Absolute Maximum Ratings TC = 25°C Symbol VCBO VCES VEBO IB IC ICP PC Tj Tstg Ta = 25°C Rating 1 700 1 700 7 3 9 14 40 3 150 55 to +150 °C °C Unit V V V A A A W Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation 3.3±0.3 18.6±0.5 (2.0) Solder Dip 5˚ 1 2 3 (2.0) 1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package Internal Connection C B E Junction temperature Storage temperature Note) *: Non-repetitive peak collector current - Electrical Ch.