C5902 PDF Datenblatt
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Beschreibung
This is NPN Transistor - 2SC5902. Power Transistors
2SC5902
Silicon NPN triple diffusion mesa type
Horizontal deflection output for TV
15.5±0.5
(10.0)
Unit: mm
φ 3.2±0.1 5˚
(4.5)
3.0±0.3 5˚
- Features
High breakdown voltage: VCBO ≥ 1 700 V Wide safe operation area Built-in dumper diode
26.5±0.5
(23.4)
(2.0)
5˚ (4.0) 2.0±0.2 1.1±0.1 0.7±0.1 5.45±0.3 10.9±0.5
5.5±0.3
5˚ 5˚
- Absolute
Maximum Ratings TC = 25°C
Symbol VCBO VCES VEBO IB IC ICP PC Tj Tstg Ta = 25°C Rating 1 700 1 700 7 3 9 14 40 3 150 55 to +150 °C °C Unit V V V A A A W
Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (E-B short) Emitter-base voltage (Collector open) Base current Collector current Peak collector current * Collector power dissipation
3.3±0.3
18.6±0.5 (2.0) Solder Dip
5˚
1
2
3
(2.0)
1: Base 2: Collector 3: Emitter EIAJ: SC-94 TOP-3E-A1 Package
Internal Connection
C B E
Junction temperature Storage temperature
Note) *: Non-repetitive peak collector current
- Electrical Ch.