C5299 PDF Datasheet
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Description
This is NPN Transistor - 2SC5299. Ordering number:EN5293
NPN Triple Diffused Planar Silicon Transistor
2SC5299
Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications
Features
· High speed : tf=100ns typ. · High breakdown voltage : VCBO=1500V. · High reliability (Adoption of HVP process). · Adoption of MBIT process.
Package Dimensions
unit:mm 2039D
[2SC5299]
3.4 16.0 5.0 8.0 5.6 3.1
21.0
22.0
4.0
2.8 2.0 20.4 1.0
2.0
0.6
1
2
3 3.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg
Tc=25˚C
5.45
5.45
1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML
Conditions
Ratings 1500 800 6 10 25 3.0 70 150 55 to +150
2.0
Unit V V V A A W W
˚C ˚C
Electrical Characteristics at Ta = 25˚C
Parameter Collector Cutoff Current Collector-to-Emit.