C5248 PDF Datasheet
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Description
This is NPN Transistor - 2SC5248. INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5248
DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·Good Linearity of hFE ·Wide Area of Safe Operation ·Complement to Type 2SA1964
APPLICATIONS ·Power amplifier applications. ·Driver stage amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL PARAMETER VALUE UNIT
VCBO
Collector-Base Voltage
160
V
VCEO
Collector-Emitter Voltage
160
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous Collector Power Dissipation @Ta=25℃
1.5
A
2 W
PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20
150
℃
Tstg
Storage Temperature
-55~150
℃
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INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN
2SC5248
TYP.
MAX
UNIT
V(BR)CEO
Collector-Emitter Breakdow.